| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor using a semiconductor layer crystallized by using crystallization inductive metal, and to provide its manufacturing method and an organic electroluminesent display device. SOLUTION: The thin film transistor includes the semiconductor layer crystallized by using the crystallization inductive metal, and the crystallization inductive metal and other metal or metal silicide existing in the semiconductor layer isolated from a channel region in a range from the surface of the semiconductor layer to a certain depth, wherein a relationship between each of the length and width of the channel region of the semiconductor layer and a leakage current value satisfies Ioff/W(L)=3.4×10<SP>-15</SP>L<SP>2</SP>+2.4×10<SP>-12</SP>L+c, where Ioff is a leakage current value (A) for the semiconductor layer, W is the width (mm) of the channel region. L is the length (μm) of the channel region, and c is a constant, 2.5×10<SP>-13</SP>to 6.8×10<SP>-13</SP>. Its manufacturing method and the organic electroluminescent display device including the thin film transistor are provided. COPYRIGHT: (C)2009,JPO&INPIT
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