发明名称 |
MANUFACTURING METHOD OF LAMINATE SUBSTRATE FOR EPITAXIAL GROWTH |
摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a laminate substrate for epitaxial growth, the method being capable of forming an oxide layer having a further improved crystal orientation compared to an uppermost surface layer of a metal substrate.SOLUTION: A laminate substrate consists of: a crystal orientation improving layer consisting of an oxide formed on an uppermost surface layer of a metal substrate 20 having a c-axis orientation ratio o 99% or more on the uppermost surface layer; and the oxide epitaxially grown to the crystal orientation improving layer. The laminate substrate includes a second oxide layer having Δω0.5° or more smaller than Δωof the uppermost surface layer of the metal substrate 20. A manufacturing method of the laminate substrate for epitaxial growth includes steps of: forming the crystal orientation improving layer on the metal substrate 20 by a RF magnetron sputtering at an angle α between a perpendicular line at a deposit position on the metal substrate 20 and a line leading to a point of zero magnetic flux density in a perpendicular direction on a target located at a shortest distance from a deposit position 20a to within 15°; and forming the second oxide layer by epitaxially growing the oxide to the crystal orientation improving layer.SELECTED DRAWING: Figure 1 |
申请公布号 |
JP2016196676(A) |
申请公布日期 |
2016.11.24 |
申请号 |
JP20150076164 |
申请日期 |
2015.04.02 |
申请人 |
TOYO KOHAN CO LTD |
发明人 |
HASHIMOTO YUSUKE;KUROKAWA TEPPEI;OKAYAMA HIRONAO |
分类号 |
C23C14/34;C23C14/08;C23C14/35;H01B12/06 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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