FINFETs WITH HIGH QUALITY SOURCE/DRAIN STRUCTURES

摘要

A semiconductor structure is provided that includes a silicon germanium alloy fin located on a portion of a topmost surface of an insulator layer. A functional gate structure straddles a portion of the silicon germanium alloy fin and is located on other portions of the topmost surface of the insulator layer. A source structure is located on one side of the functional gate structure and a drain structure is located on another side of the functional gate structure. The source structure and the drain structure surround the other portions of the silicon germanium alloy fin and are located on a germanium graded silicon-containing region that is present at a footprint of the other portions of the silicon germanium alloy fin.

主权项

1. A semiconductor structure comprising:
a silicon germanium alloy fin located directly on a portion of an insulator layer; a functional gate structure straddling over only a portion of said silicon germanium alloy fin; and a source structure located on one side of said functional gate structure and a drain structure located on another side of said functional gate structure, wherein each of said source structure and said drain structure directly contacts sidewall surfaces and a topmost surface of an exposed portion of said silicon germanium alloy fin not containing said functional gate structure, and wherein a bottommost surface of each of said source structure and said drain structure is located directly on a germanium graded silicon-containing region that is present at a footprint of said exposed portion of said silicon germanium alloy fin not containing said functional gate structure.