发明名称 |
Monitoring dimensions of features at different locations in the processing of substrates |
摘要 |
A substrate processing apparatus has a chamber having a substrate support (144), gas distributor (122), gas energizer (165), and gas exhaust port. A process monitor is provided to monitor features in a first region of the substrate and generate a corresponding first signal, and to monitor features in a second region of the substrate and generate a second signal. A chamber controller (300) receives and evaluates the first and second signals, and operates the chamber in relation to the signals. For example, the chamber controller can select a process recipe depending upon the signal values. The chamber controller can also set a process parameter at a first level in a first processing sector and at a second level in a second processing sector. The apparatus provides a closed control loop to independently monitor and control processing of features at different regions of the substrate.
|
申请公布号 |
EP1517357(A2) |
申请公布日期 |
2005.03.23 |
申请号 |
EP20040019809 |
申请日期 |
2004.08.20 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
BARNES, MICHAEL;HOLLAND, JOHN;SHAN, HONGQING;PU, BRYAN Y.;JAIN, MOHIT;SUI, ZHIFENG;ARMACOST, MICHAEL D.;HANSON, NEIL E.;MA, DIANA XIAOBING;SINHA, ASHOK K.;MAYDAN, DAN |
分类号 |
H01L21/02;H01L21/66;H01J37/32;H01L21/00;(IPC1-7):H01J37/32 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|