发明名称 Switching Element, Reconfigurable Logic Integrated Circuit And Memory Element
摘要 The switching element of the present invention is of a configuration that includes: an ion conduction layer ( 40 ) that includes an oxide, a first electrode ( 21 ) and a second electrode ( 31 ) that are provided in contact with the ion conduction layer ( 40 ) and that are connected by the precipitate of metal that is supplied from the outside or for which electrical properties change due to the dissolution of precipitated metal, and a third electrode ( 35 ) provided in contact with the ion conduction layer ( 40 ) and that can supply metal ions. The use of this configuration allows the switching voltage to be set higher than in the related art.
申请公布号 US2007285148(A1) 申请公布日期 2007.12.13
申请号 US20050813065 申请日期 2005.12.27
申请人 NEC CORPORATION 发明人 SAKAMOTO TOSHITSUGU;KAWAURA HISAO;SUNAMURA HIROSHI;BANNO NAOKI
分类号 H03K17/00 主分类号 H03K17/00
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