| 摘要 |
To strengthen tolerance to radiation. Source and back gate of P-channel transistor P 1 are connected to power supply. Gate of the P-channel transistor P 1 is connected to input terminal IN. Drain of P 1 is connected to output terminal OUT. Source and back gate of N-channel transistor N 1 are grounded. Gate of N 1 is connected to IN. Drain of N 1 is connected to OUT. Cathode of diode D 1 is connected to power supply, anode of D 1 being connected to OUT. Cathode of diode D 2 is connected to OUT, anode of D 2 being grounded. When seen from a direction perpendicular to a substrate on which an inverter circuit is formed, a projection plane of a region of a p+ diffusion layer 32 of D 1 includes a projection plane of a region of an n+ diffusion layer 24 of N 1 , and a projection plane of a region of an n+ diffusion layer 41 of the diode D 2 includes a projection plane of a region of a p+ diffusion layer 14 of P 1.
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