发明名称 |
Epitaxial growth of GaN and SiC on silicon using nanowires and nanosize nucleus methodologies |
摘要 |
A method of fabricating a continuous layer of a defect sensitive material on a silicon substrate includes preparing a silicon substrate; forming a nanostructure array directly on the silicon substrate; depositing a selective growth enhancing layer on the substrate; smoothing the selective growth enhancing layer; and growing a continuous layer of the defect sensitive material on the nanostructure array.
|
申请公布号 |
US2008171424(A1) |
申请公布日期 |
2008.07.17 |
申请号 |
US20070653802 |
申请日期 |
2007.01.16 |
申请人 |
SHARP LABORATORIES OF AMERICA, INC. |
发明人 |
LI TINGKAI;MAA JER-SHEN;TWEET DOUGLAS J.;ZHUANG WEI-WEI;HSU SHENG TENG |
分类号 |
H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|