发明名称 RECYCLING OF ION IMPLANTATION MONITOR WAFERS
摘要 A wafer processing method. The method includes providing a semiconductor wafer. The semiconductor wafer includes (i) a semiconductor layer and (ii) a dopant layer on top of the semiconductor layer. The dopant layer comprises dopants. The method further includes removing the dopant layer from the semiconductor wafer. No chemical etching is performed on the dopant layer before said removing the dopant layer is performed.
申请公布号 US2008171439(A1) 申请公布日期 2008.07.17
申请号 US20070623354 申请日期 2007.01.16
申请人 CODDING STEVEN ROSS;GRECO JOSEPH R;KRYWANCZYK TIMOTHY CHARLES 发明人 CODDING STEVEN ROSS;GRECO JOSEPH R.;KRYWANCZYK TIMOTHY CHARLES
分类号 H01L21/302 主分类号 H01L21/302
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