Semiconductor non volatile memory device and method of producing the same

摘要

A semiconductor integrated circuit device comprises a substrate (11); a nonvolatile memory device formed in a memory cell region of said substrate (11), wherein the nonvolatile memory device comprises a first active region (11A) covered with a tunnel insulating film (12A); a second active region (11 B) formed next to the first active region (11A) and covered with an insulating film (12Ac); a control gate formed of an embedded diffusion region (11 C) formed in the second active region (11 B); a first gate electrode (13A) extending on the tunnel insulating film (12A) in the first active region (11A) and forming a bridge between the first and second active regions (11A, 11 B) to be capacitive-coupled via the insulating film (12Ac) to the embedded diffusion region (11 C) in the second active region (11 B), the first gate electrode (13A) having sidewall faces thereof covered with a protection insulating film (18) formed of a thermal oxide film; and a diffusion region (11 a, 11c) formed on each of sides of the first gate electrode (13A) in the first active region (11A); and wherein said circuit further comprises a semiconductor device formed in a device region of said substrate, the semiconductor device comprising a gate insulating film (12B, 12C) covering said substrate (11) and a second gate electrode (13B, 13C) formed on the gate insulating film (12B, 12C), wherein a bird's beak structure is formed of a thermal oxide film at an interface of the tunnel insulating film (12A) and the first gate electrode (13A), the bird's beak structure penetrating into the first gate electrode (13A) along the interface from the sidewall faces of the first gate electrode (13A); and the gate insulating film (12B, 12C) is interposed between said substrate (11) and the second gate electrode (13B, 13C) to have a substantially uniform thickness.