Gallium nitride substrate and gallium nitride film deposition method

摘要

Affords high-carrier-concentration, low-cracking-incidence gallium nitride substrates and methods of forming gallium nitride films. A gallium nitride film 52 in which the carrier concentration is 1 × 10 17 cm -3 or more is created. Initially, a gallium nitride layer 51 including an n -type dopant is formed onto a substrate 50. Then, the gallium nitride layer 51 formed on the substrate 50 is heated to form a gallium nitride film 52.