| 发明名称 |
MULTICHANNEL DEVICES WITH GATE STRUCTURES TO INCREASE BREAKDOWN VOLTAGE |
| 摘要 |
A transistor device is provided that includes a base structure and a superlattice structure that overlies the base structure. The superlattice structure comprises a multichannel ridge having sides that extend to the base structure. The multichannel ridge comprises a plurality of heterostructures that each form a channel of the multichannel ridge. A three-sided gate configuration is provided that wraps around and substantially surrounds the top and sides of the multichannel ridge along at least a portion of its depth. The three-sided gate configuration is configured to re-distribute peak electric fields along the three-sided gate configuration to facilitate the increase in breakdown voltage of the transistor device. |
| 申请公布号 |
US2016293713(A1) |
申请公布日期 |
2016.10.06 |
| 申请号 |
US201514676285 |
申请日期 |
2015.04.01 |
| 申请人 |
NECHAY BETTINA A.;Howell Robert S.;Stewart Eric J.;Henry Howell George;Parke Justin Andrew;Freitag Ronald G. |
发明人 |
NECHAY BETTINA A.;Howell Robert S.;Stewart Eric J.;Henry Howell George;Parke Justin Andrew;Freitag Ronald G. |
| 分类号 |
H01L29/40;H01L29/78;H01L29/778;H01L29/205;H01L29/10;H01L29/423;H01L29/15;H01L29/20 |
主分类号 |
H01L29/40 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A transistor device comprising:
a base structure; a superlattice structure overlying the base structure and comprising a multichannel ridge having sides that extend to the base structure, the multichannel ridge comprising a plurality of heterostructures that each form a channel of the multichannel ridge; and a three-sided gate configuration that wraps around and substantially surrounds the top and sides of the multichannel ridge along at least a portion of its depth, the three-sided gate configuration is configured to re-distribute peak electric fields along the three-sided gate configuration to facilitate the increase in breakdown voltage of the transistor device. |
| 地址 |
Laurei MD US |
