Method of preparing and using photosensitive material

摘要

Provided in one embodiment is a method that includes selecting a photoresist that is one of a positive-tone photoresist and a negative-tone photoresist. A first additive or a second additive is selected based on the photoresist. The first additive has a fluorine component and a base component attached to a polymer and is selected if the a positive-tone resist is provided. The second additive has the fluorine component and an acid component attached to the polymer and is selected with a negative-tone resist is provided. The selected photoresist and the selected additive material are applied to a target substrate.

主权项

1. A method of semiconductor device fabrication, comprising:
providing a photoresist, wherein the photoresist is one of a positive-tone photoresist and a negative-tone photoresist; selecting an additive material, wherein the additive material is one of a first additive and a second additive, wherein the first additive has a fluorine component attached to a first position of a polymer chain and a base component attached to a second position of the polymer chain, wherein the base component is one of a quencher and a thermal decompose base (TDB); wherein the second additive has the fluorine component attached to a third location of a second polymer chain and an acid component attached to a fourth location of the second polymer chain, wherein the acid component is a photoacid generator, wherein the selecting the additive includes: selecting the first additive if the providing the photoresist included providing the positive-tone resist and selecting the second additive if the providing the photoresist included selecting the negative-tone resist; and applying the provided photoresist and the selected additive material to a target substrate.