发明名称 |
Hybrid oriented substrates and crystal imprinting methods for forming such hybrid oriented substrates |
摘要 |
A semiconductor structure with an insulating layer on a silicon substrate, a plurality of electrically-isolated silicon-on-insulator (SOI) regions separated from the substrate by the insulating layer, and a plurality of electrically-isolated silicon bulk regions extending through the insulating layer to the substrate. Each of one number of the SOI regions is oriented with a first crystal orientation and each of another number of the SOI regions is oriented with a second crystal orientation that differs from the first crystal orientation. The bulk silicon regions are each oriented with a third crystal orientation. Damascene or imprinting methods of forming the SOI regions and bulk silicon regions are also provided.
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申请公布号 |
US2006284250(A1) |
申请公布日期 |
2006.12.21 |
申请号 |
US20050154906 |
申请日期 |
2005.06.16 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HSU LOUIS L.;MANDELMAN JACK A.;TONTI WILLIAM R. |
分类号 |
H01L27/01 |
主分类号 |
H01L27/01 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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