发明名称 GAS SUPPLY SYSTEM AND TREATMENT SYSTEM
摘要 <p>A processing system that can supply a material gas produced inside a material reservoir tank into a processing apparatus while generating almost no pressure loss is provided. <??>In a processing system comprising: a processing apparatus including a gas injection means 42 for injecting a specific material gas into a processing vessel 26 in order to provide specific processing to an object to be processed W, said material gas being produced from a metallic compound material M with low vapor pressure; and a gas supply system 24 for supplying said specific material gas to said gas injection means, said gas injection means is a shower head portion and said gas supply system provides: a gas passage 56 extending upwardly from said showerhead portion; a material reservoir tank 58 attached to the upper-end portion of said gas passage for containing said metallic compound material therein; and an open/close valve 60 for opening/closing said gas passage. <IMAGE></p>
申请公布号 EP1548813(A4) 申请公布日期 2007.07.18
申请号 EP20030792832 申请日期 2003.08.25
申请人 TOKYO ELECTRON LIMITED 发明人 KASAI, SHIGERU;TANAKA, SUMI;SAITO, TETSUYA;YAMAMOTO, NORIHIKO;YANAGITANI, KENICHI
分类号 C23C16/455;C23C16/448;H01L21/00;H01L21/285;H01L21/31;(IPC1-7):C23C16/448 主分类号 C23C16/455
代理机构 代理人
主权项
地址
您可能感兴趣的专利