| 摘要 |
PROBLEM TO BE SOLVED: To reduce parasitic capacitance to decrease gate resistance. SOLUTION: A multi-finger transistor 400 comprises an active region 420, a multi-finger gate 450, a source region 460, and a drain region 470. The active region is defined in unit cells of a substrate and devided in two. The multi-finger gate includes a plurality of gate fingers 452 formed in the active region, and a gate connection part 454 which connects the gate fingers to one another and is formed between two active regions. The source region is formed in a part of active region adjacent to the gate fingers. A plurality of drain regions are formed in a part of the active region adjacent to the gate fingers. The multi-finger transistor has a small area, and has low resistance and parasitic capacitance. COPYRIGHT: (C)2008,JPO&INPIT |
