| 摘要 |
PROBLEM TO BE SOLVED: To provide: a filament for ion doping device, which improves a lifetime while suppressing increase of input power; its manufacturing method; and an ion doping device having the filament for ion doping device. SOLUTION: The filament 11 is made of a tungsten wire having conductivity, and the tungsten wire is provided with two straight line parts 12 extending in a straight line shape and a connecting part 13 which connects end parts of mutually adjoining straight line parts 12 out of a plurality of straight line parts 12. Then, the straight line part 12 has a large diameter portion 14 formed having a large filament cross-section area that is the cross-section area at the vertical cross-section in a direction in which the tungsten wire extends rather than the connecting part 13. COPYRIGHT: (C)2009,JPO&INPIT
|
