发明名称 INDUCTIVE COUPLED PLASMA PROCESSING APPARATUS
摘要 The present invention provides an inductively coupled plasma treating apparatus capable of uniformly performing plasma treatment with respect to a large substrate to be treated by using a metallic window. The inductively coupled plasma treating apparatus, which performs inductively coupled plasma treatment with respect to a rectangular substrate, includes a treatment chamber to receive a substrate; a high-frequency antenna to generate inductively coupled plasma in a region in which the substrate is arranged in the treatment chamber; and a metallic window interposed between a plasma generation region, in which the inductively coupled plasma is generated, and the high-frequency antenna and having a rectangular shape corresponding to the substrate. A metallic window (20) is divided into a first region (201) including a long side (2a) and a second region (202) including a short side (2b) so that the first region (201) is insulated from the second region (202). In addition, the division is achieved in such a manner that the ratio (a/b) of a width (a) of the second region (202) formed radially to a width (B) of the first region (201) formed radially is in the range of 0.8 to 1.2.
申请公布号 KR20140062409(A) 申请公布日期 2014.05.23
申请号 KR20130134997 申请日期 2013.11.07
申请人 TOKYO ELECTRON LIMITED 发明人 SASAKI KAZUO;SATOYOSHI TSUTOMU;YAMAZAWA YOHEI;FURUYA ATSUKI;SAITO HITOSHI
分类号 H05H1/46;H01L21/205;H01L21/3065 主分类号 H05H1/46
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