发明名称 Memory array with redundant bits and memory element voting circuits
摘要 An integrated circuit may have an array of memory elements. Each memory element may have multiple memory cells. Each memory element may have a voting circuit that receives signals from the memory cells in that memory element. The voting circuit can produce an output based on the signals. The signals stored by the memory cells of each memory element may be redundant so that the voting circuit can produce an accurate output even in the event that a radiation strike causes some of the memory cells to flip their states to erroneous values. The memory elements may be based on memory cells such as static random-access memory cells and thyristor-based cells.
申请公布号 US8739010(B2) 申请公布日期 2014.05.27
申请号 US20100950944 申请日期 2010.11.19
申请人 XU YANZHONG;ALTERA CORPORATION 发明人 XU YANZHONG
分类号 G06F11/08 主分类号 G06F11/08
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