METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to prevent a bending effect of a gate due to a counter doping photoresist pattern by performing a counter doping process before forming the gate. A semiconductor substrate(21) including an isolation layer for defining an active region is provided. A gate region of the active region is recessed. An ion implantation mask is formed on the entire surface of the substrate. A first conductive type impurity ions are implanted into the exposed region of the substrate. The ion implantation mask is removed therefrom. A gate is formed on the recessed part of the substrate. An asymmetric junction region is formed within the surface of the substrate of both sides of the gate by implanting a second conductive type impurity ion therein.