| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
According to one embodiment, a semiconductor device includes an n-type semiconductor layer, a first electrode, and a nitride semiconductor layer. The n-type semiconductor layer includes diamond. The nitride semiconductor layer is provided between the n-type semiconductor layer and the first electrode. The nitride semiconductor layer includes AlxGa1-xN (0≦x≦1) and is of n-type. |
| 申请公布号 |
US2016172449(A1) |
申请公布日期 |
2016.06.16 |
| 申请号 |
US201514963825 |
申请日期 |
2015.12.09 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
SUZUKI Mariko;SAKAI Tadashi |
| 分类号 |
H01L29/16;H01L29/20;H01L29/167;H01L29/868 |
主分类号 |
H01L29/16 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
an n-type semiconductor layer including diamond; a first electrode; and a nitride semiconductor layer provided between the n-type semiconductor layer and the first electrode, the nitride semiconductor layer including AlxGa1-xN (0≦x≦1) and being of n-type. |
| 地址 |
Minato-ku JP |
