| 发明名称 |
FIN-FET DEVICE AND MANUFACTURING METHOD THEREOF |
| 摘要 |
A fin-like field-effect transistor (Fin-FET) device includes a substrate, a fin structure disposed on the substrate, and an isolation structure disposed adjacent to the fin structure. The fin structure includes a recessed structure, which a bottom of the recessed structure is below a top surface of the isolation structure. |
| 申请公布号 |
US2016172439(A1) |
申请公布日期 |
2016.06.16 |
| 申请号 |
US201414569336 |
申请日期 |
2014.12.12 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LIN Chih-Han;LIN Jr-Jung;CHANG Ming-Ching |
| 分类号 |
H01L29/06;H01L29/66;H01L21/283;H01L29/78 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A fin-like field-effect transistor (Fin-FET) device, comprising:
a substrate; a fin structure disposed on the substrate and having a recessed structure; and an isolation structure disposed adjacent to the fin structure, and a bottom of the recessed structure being in the fin structure and below a top surface of the isolation structure. |
| 地址 |
HSINCHU TW |
