INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

An integrated circuit device comprises: a source/drain area which is formed in a pin active area and has an upper face on which a recess area is formed; a contact plug which extends in a third direction from the inside of the recess area on the source/drain area; and a metal silicide film which includes a first portion formed along the inner wall of the recess area and covering the bottom of the contact plug with a first thickness, and a second portion connected integrally to the first portion and covering the side wall of the contact plug with a second thickness different from the first thickness. To manufacture the integrated circuit device, a part of a source/drain area is removed through a contact hole to form a recess area on the upper surface of the source/drain area, a metal silicide film which includes a first portion covering the source/drain area with a first thickness on the bottom of the recess area, and a second portion covering the source/drain area with a second thickness on the side wall of the recess area, and a contact plug extending from the inside of the recess area along the contact hole and connected to the source/drain area through the metal silicide film is formed.