| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for driving a semiconductor device in which the influence of variations in the threshold voltage and mobility of a transistor can be reduced.SOLUTION: The method for driving a semiconductor device having a transistor and a capacitive element electrically connected to the gate of the transistor includes: a first period in which a voltage corresponding to the threshold voltage of the transistor is held in the capacitive element; a second period in which the sum of a video signal voltage and the threshold voltage is held in the capacitive element in which the threshold voltage has been held; and a third period in which electrical charge held, in the second period, in the capacitive element in accordance with the sum of the video signal voltage and the threshold voltage, is discharged via the transistor.SELECTED DRAWING: Figure 1 |
