发明名称 THERMOELECTRIC TRANSDUCER
摘要 PROBLEM TO BE SOLVED: To achieve a thermoelectric transducer with a large power factor.SOLUTION: The thermoelectric transducer includes a semiconductor lamination thin film 10 having a SiGe layer 2 and a Si layer 3, being in contact with the SiGe layer 2. A composition ratio of the SiGe layer 2 based on an atomic ratio of Si and Ge is within a range of 85:15 to 63:37. The lamination thin film 10 includes a plurality of lamination structures 4 of the SiGe layers 2 and the Si layers 3.SELECTED DRAWING: Figure 1
申请公布号 JP2016154211(A) 申请公布日期 2016.08.25
申请号 JP20150221741 申请日期 2015.11.12
申请人 TDK CORP 发明人 MAEKAWA KAZUYA;ASATANI TAKASHI
分类号 H01L35/26;H01L35/14;H01L35/32 主分类号 H01L35/26
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