发明名称 |
THERMOELECTRIC TRANSDUCER |
摘要 |
PROBLEM TO BE SOLVED: To achieve a thermoelectric transducer with a large power factor.SOLUTION: The thermoelectric transducer includes a semiconductor lamination thin film 10 having a SiGe layer 2 and a Si layer 3, being in contact with the SiGe layer 2. A composition ratio of the SiGe layer 2 based on an atomic ratio of Si and Ge is within a range of 85:15 to 63:37. The lamination thin film 10 includes a plurality of lamination structures 4 of the SiGe layers 2 and the Si layers 3.SELECTED DRAWING: Figure 1 |
申请公布号 |
JP2016154211(A) |
申请公布日期 |
2016.08.25 |
申请号 |
JP20150221741 |
申请日期 |
2015.11.12 |
申请人 |
TDK CORP |
发明人 |
MAEKAWA KAZUYA;ASATANI TAKASHI |
分类号 |
H01L35/26;H01L35/14;H01L35/32 |
主分类号 |
H01L35/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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