| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device which achieves thinning of a charge storage film while maintaining charge storage characteristics.SOLUTION: A nonvolatile semiconductor storage device of an embodiment comprises: a semiconductor layer; a first memory cell having a first insulation film formed on the semiconductor layer, a first charge storage film which is formed on the first insulation film and has C60 fullerene of not less than 0.5 monolayer and less than 1.0 monolayer, a second insulation film on the first charge storage film and a first control electrode on the second insulation film; and a second memory cell having a third insulation film formed on the semiconductor layer, a second charge storage film which is formed on the third insulation film and has C60 fullerene of not less then 0.5 monolayer and less than 1.0 monolayer and leads to the first charge storage film, a fourth insulation film on the second charge storage film, and a second control electrode on the fourth insulation film. |
