Memory Structures and Arrays, and Methods of Forming Memory Structures and Arrays

摘要

Some embodiments include memory structures having a diode over a memory cell. The memory cell can include programmable material between a pair of electrodes, with the programmable material containing a multivalent metal oxide directly against a high-k dielectric. The diode can include a first diode electrode directly over one of the memory cell electrodes and electrically coupled with the memory cell electrode, and can include a second diode electrode laterally outward of the first diode electrode and not directly over the memory cell. Some embodiments include memory arrays comprising the memory structures, and some embodiments include methods of making the memory structures.

主权项

1. A memory structure, comprising:
a memory cell having programmable material between a pair of electrodes; the programmable material comprising a multivalent metal oxide; and a diode structure over the memory cell; the diode structure comprising a first diode electrode directly over one of the memory cell electrodes and electrically coupled with said one of the memory cell electrodes; the diode further comprising a second diode electrode comprising a pair of laterally spaced segments disposed laterally outward of the first diode electrode and laterally outward of the memory cell.