| 发明名称 |
INTEGRATED ON-CHIP JUNCTION CAPACITOR FOR POWER MANAGEMENT INTEGRATED CIRCUIT DEVICE |
| 摘要 |
A power semiconductor device includes a substrate of a first conductivity type, a buried layer of a second conductivity type formed in at least a portion of the substrate, and at least one epitaxial layer of the first conductivity type formed on at least a portion of an upper surface of the substrate and covering the buried layer. The epitaxial layer and the buried layer form a junction capacitor. The device further includes at least one active power transistor formed in an upper surface of the epitaxial layer and above at least a portion of the buried layer. |
| 申请公布号 |
US2016322349(A1) |
申请公布日期 |
2016.11.03 |
| 申请号 |
US201615141816 |
申请日期 |
2016.04.28 |
| 申请人 |
CoolStar Technology, Inc. |
发明人 |
Xu Shuming |
| 分类号 |
H01L27/06;H01L29/06;H01L29/66;H01L29/78;H01L21/8234;H01L49/02;H01L29/10 |
主分类号 |
H01L27/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A power semiconductor device, comprising:
a substrate of a first conductivity type; a buried layer of a second conductivity type formed in at least a portion of the substrate; at least one epitaxial layer of the first conductivity type formed on at least a portion of an upper surface of the substrate and covering the buried layer, the epitaxial layer and the buried layer forming a junction capacitor; and at least one active power transistor formed in an upper surface of the epitaxial layer and above at least a portion of the buried layer. |
| 地址 |
Sunnyvale CA US |
