发明名称 SEMICONDUCTOR MEMORY DEVICE, MEMORY SYSTEM INCLUDING THE SAME, AND METHOD OF ERROR CORRECTION OF THE SAME
摘要 A semiconductor memory device capable of detecting a miscorrected bit generated in the semiconductor memory device outside the semiconductor memory device and a memory system including the semiconductor memory device are disclosed. The semiconductor memory device may generate first check bits based on first data received from the outside, divide an error correcting code (ECC) code word including the first data and the first check bits into a plurality of code word groups, and dispose a miscorrected bit, caused by error bits included in a first ECC code word group, in another ECC code word group rather than the first ECC code word group.
申请公布号 US2016350181(A1) 申请公布日期 2016.12.01
申请号 US201615156804 申请日期 2016.05.17
申请人 Samsung Electronics Co., Ltd. 发明人 CHA Sanguhn;Chung Hoiju;Kang Uksong;Park Chulwoo
分类号 G06F11/10;H03M13/15;G11C29/52 主分类号 G06F11/10
代理机构 代理人
主权项 1. A method of correcting an error in a semiconductor memory device including a memory cell array which includes a plurality of memory cell groups each including a plurality of memory cells, the method comprising: receiving first data from outside the semiconductor memory device; generating first check bits based on the first data so that a miscorrected bit is disposed in another error correcting code (ECC) code word group rather than a first ECC code word group, the miscorrected bit being caused by error bits included in the first ECC code word group; and storing an ECC code word including a plurality of ECC code word groups in the plurality of memory cell groups, each of the plurality of ECC code word groups having the first data and the first check bits.
地址 Suwon-si KR