| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film capacitor that the electric resistance of electrodes is small, a Q value is big, the number of thin film layers sequentially coated and formed is lessened, effective for miniaturization/integration of a device is effective and that suppresses defects in characteristics and deterioration in reliability. SOLUTION: The thin film capacitor is such that a plurality of lower electrode layers are spaced out and provided in the right and left directions on a support substrate 1, two capacitance generation sections that are constructed by sandwiching a dielectric layer 4 between the layers 2 and upper electrode layers 5 are formed by spacing out and providing two layers 5 in the right and left directions through the layer 4 on at least one layer 2 out of a plurality of the layers 2, an extraction electrode layer 8 is each provided at two layers 5 so as to allow two capacitance generation sections to be connected in a series, the maximum distance L1 between two layers 5 in the right and left directions is shorter than the minimum length W1 in the direction that the layer 5 and the layer 8 intersecting in a planar view, in the right and left directions in an area that the layer 5 and the layer 8 overlapping in a planar view, thereby the electric resistance of the electrodes is lessened, and the Q value can be increased. COPYRIGHT: (C)2005,JPO&NCIPI
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