| 摘要 |
An internal voltage generating circuit is provided to assure a stable operation of a flash memory device and an apparatus using the flash memory device, by blocking the flow of a leakage current and generating a stable internal voltage during a power-up operation. A reference voltage generation part(510) generates a reference voltage. A voltage comparison part(520) compares the reference voltage with an internal source voltage according to an operation enable signal, and then outputs the comparison result. A control signal part receives an external control signal and outputs threshold and fixed values of the external control signal. A voltage control part(530) comprises a first P type transistor connecting an external source voltage and the internal source voltage by receiving the output of the voltage comparison part, a second P type transistor connecting the external source voltage and the internal source voltage by receiving the threshold value of the external input control signal, and an N type transistor having a threshold voltage of connecting the external source voltage and the internal source voltage by receiving the fixed value of the external control signal.
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