PLASMA ETCHING APPARATUS, PLASMA ETCHING SYSTEM AND METHOD OF ETCHING A SUBSTRATE USING THE SAME

摘要

A plasma etching apparatus, a plasma etching system, and a substrate etching method are provided to quickly remove pollutants from a substrate by performing etching processes on upper, side, lower, and rear surfaces of the substrate at the same time. A plasma etching apparatus includes a first etching module(21), a second etching module(22), and a transfer module(35). The first etching module etches a periphery of a substrate. The second etching module is arranged to be close to a first process module and etches a rear surface of the substrate. The transfer module transfers the substrate in and out of the first and second etching modules. The transfer module includes a main body and a blade. The blade is rotatably connected to the main body and inverts the substrate. The substrate is temporarily contained in a load-lock chamber. The transfer module is arranged in a transfer chamber.