FORMING METHOD OF ALUMINUM OXIDE LAYER, AND MANUFACTURING METHOD OF CHARGE TRAP MEMORY ELEMENT USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a forming method of an aluminum oxide layer, and a manufacturing method of a charge trap type memory element which utilizes the same. SOLUTION: The forming method of an alpha aluminum oxide layer, along with a manufacturing method of a memory element which utilizes the same, includes a first step for forming an amorphous aluminum oxide layer on a lower part film, a second step for forming a crystalline auxiliary layer on the amorphous aluminum oxide layer, and a third step for crystallizing the amorphous aluminum oxide layer. The second step includes a step for forming an amorphous auxiliary layer on the amorphous aluminum oxide layer and a step for crystallizing the amorphous auxiliary layer. COPYRIGHT: (C)2009,JPO&INPIT