发明名称 CONDUCTIVE STRUCTURE AND MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE AND MANUFACTURING METHOD THEREOF
摘要 An opening is formed in an insulating film being a formation site, vertical and parallel CNTs are formed, tip portions of the CNTs are inserted into the opening, and the CNTs are removed except for the tip portions inserted into the opening. With this configuration, a desired conductive structure with high reliability is realized by forming high-quality CNTs in an opening of a formation site without depending on a base material.
申请公布号 US2016172305(A1) 申请公布日期 2016.06.16
申请号 US201514976595 申请日期 2015.12.21
申请人 FUJITSU LIMITED 发明人 SATO Motonobu
分类号 H01L23/532;H01L23/528;H01L23/522;H01L21/768 主分类号 H01L23/532
代理机构 代理人
主权项 1. A manufacturing method of a conductive structure, comprising: forming an opening in a formation site; forming vertical and parallel carbon nanotubes; inserting tip portions of the carbon nanotubes into the opening; and removing the carbon nanotubes except for the tip portions inserted into the opening.
地址 Kawasaki-shi JP