发明名称 |
CONDUCTIVE STRUCTURE AND MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
An opening is formed in an insulating film being a formation site, vertical and parallel CNTs are formed, tip portions of the CNTs are inserted into the opening, and the CNTs are removed except for the tip portions inserted into the opening. With this configuration, a desired conductive structure with high reliability is realized by forming high-quality CNTs in an opening of a formation site without depending on a base material. |
申请公布号 |
US2016172305(A1) |
申请公布日期 |
2016.06.16 |
申请号 |
US201514976595 |
申请日期 |
2015.12.21 |
申请人 |
FUJITSU LIMITED |
发明人 |
SATO Motonobu |
分类号 |
H01L23/532;H01L23/528;H01L23/522;H01L21/768 |
主分类号 |
H01L23/532 |
代理机构 |
|
代理人 |
|
主权项 |
1. A manufacturing method of a conductive structure, comprising:
forming an opening in a formation site; forming vertical and parallel carbon nanotubes; inserting tip portions of the carbon nanotubes into the opening; and removing the carbon nanotubes except for the tip portions inserted into the opening. |
地址 |
Kawasaki-shi JP |