CONTROLLED MANUFACTURING METHOD OF METAL OXIDE SEMICONDUCTOR AND METAL OXIDE SEMICONDUCTOR STRUCTURE HAVING CONTROLLED GROWTH CRYSTALLOGRAPHIC PLANE

摘要

A method of controlling a growth crystallographic plane of a metal oxide semiconductor having a wurtzite crystal structure by using a thermal chemical vapor deposition method includes controlling a growth crystallographic plane by allowing the metal oxide semiconductor to grow in a non-polar direction by using a source material including a thermal decomposition material that reduces a surface energy of a polar plane of the metal oxide semiconductor.

主权项

1. A method of controlling the orientation of a growth of a metal oxide semiconductor nanostructure having a wurtzite crystal structure during the growth of the metal oxide semiconductor nanostructure using a thermal chemical vapor deposition method,
said thermal chemical vapor deposition method employs a source material to grow the metal oxide semiconductor nanostructure comprising a polar surface and a non-polar surface, said source material containing a source for the metal oxide semiconductor nanostructure and a thermal decomposition material, wherein the controlling method comprising controlling the orientation of the growth of the metal oxide semiconductor nanostructure by allowing the thermal decomposition material to reduce a surface energy of the polar surface of the metal oxide semiconductor nanostructure.