SEMICONDUCTOR MEMORY DEVICES HAVING SEPARATE SENSING CIRCUITS AND RELATED SENSING METHODS

摘要

A sensing circuit of a semiconductor memory device is provided which includes a bit line having a first edge and a second edge, a sensing line, a current supply unit, and a sense amplifier. A plurality of memory cells is connected between the first edge and the second edge. The sensing line is connected to the second edge of the bit line, and the current supply unit supplies a sensing current via the first edge of the bit line. The sense amplifier senses data stored at a selected memory cell by comparing a sensing voltage of the sensing line with a reference voltage when the sensing current flows to the selected memory cell from the first edge of the bit line.

主权项

1. A sensing circuit for a semiconductor memory device comprising:
a bit line having a first end and a second end, a plurality of memory cells being connected to the bit line between the first end and the second end; a sensing line that is connected to the second end of the bit line; a current supply unit that is configured to supply a sensing current to the first end of the bit line; and a sense amplifier that is configured to sense data stored at a selected one of the memory cells by comparing a sensing voltage of the sensing line with a reference voltage when the sensing current flows to the selected one of the memory cells from the first end of the bit line.