| 摘要 |
Embodiments of semiconductor devices, integrated circuit devices and methods are disclosed. In some embodiments, a semiconductor device may include a first fin and a second fin disposed on a substrate. The first fin may have a portion including a first material disposed between a second material and the substrate, the second material disposed between a third material and the first material, and the third material disposed between a fourth material and the second material. The first and third materials may be formed from a first type of extrinsic semiconductor, and the second and fourth materials may be formed from a second, different type of extrinsic semiconductor. The second fin may be laterally separated from the first fin and materially contiguous with at least one of the first, second, third or fourth materials. Other embodiments may be disclosed and/or claimed. |
