METHOD OF FABRICATING ARRAY SUBSTRATE

摘要

The present invention provides a method of fabricating an array substrate, which comprises the steps of forming a semiconductor layer of poly-silicon and a first storage electrode formed of a semiconductor material of poly-silicon doped with impurities; forming a gate insulation film on entire surfaces of the semiconductor layer of poly-silicon and the first storage electrode; forming a gate electrode in correspondence to the central portion of the semiconductor layer of poly-silicon and a second storage electrode in correspondence to the first storage electrode on the gate insulation film; forming an Ohmic area by doping impurities in the semiconductor layer of poly-silicon exposed to the outside of the gate electrode and forming a portion corresponding to the gate electrode as an active area of pure poly-silicon; forming an interlayer insulation film having semiconductor layer contact holes through which the Ohmic area is exposed to the upper sides of the gate electrode and the first storage electrode; and forming a source electrode and a drain electrode spaced apart from each other while being in contact with the Ohmic area through the semiconductor contact holes above the interlayer insulation layer.