发明名称 |
III-NITRIDE NANOWIRE LED WITH STRAIN MODIFIED SURFACE ACTIVE REGION AND METHOD OF MAKING THEREOF |
摘要 |
A light emitting diode (LED) device includes a semiconductor nanowire core, and an In(Al)GaN active region quantum well shell located radially around the semiconductor nanowire core. The active quantum well shell contains indium rich regions having at least 5 atomic percent higher indium content than indium poor regions in the same shell. The active region quantum well shell has a non-uniform surface profile having at least 3 peaks. Each of the at least 3 peaks is separated from an adjacent one of the at least 3 peaks by a valley, and each of the at least 3 peaks extends at least 2 nm in a radial direction away from an adjacent valley. |
申请公布号 |
US2016260866(A1) |
申请公布日期 |
2016.09.08 |
申请号 |
US201615060950 |
申请日期 |
2016.03.04 |
申请人 |
GLO AB |
发明人 |
Romano Linda;Yi Sungsoo;Svensson Patrik;Gardner Nathan |
分类号 |
H01L33/06;H01L33/32;H01L33/12;H01L33/24;H01L27/15;H01L33/00 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
1. A nanowire device, comprising:
a semiconductor nanowire core; and a first semiconductor shell located radially around the semiconductor nanowire core, wherein:
the first semiconductor shell has a non-uniform surface profile having at least 3 peaks;each of the at least 3 peaks is separated from an adjacent one of the at least 3 peaks by a valley; andeach of the at least 3 peaks extends at least 2 nm in a radial direction away from an adjacent valley. |
地址 |
Lund SE |