发明名称 Method for Producing the Rear Contact Layer for CdTe Thin-Film Solar Cells
摘要 The present invention concerns a method for the manufacture of the first layer of a back contact layer for thin-layer solar cells in superstrate configuration. In the prior art, this layer is deposited as a compound, for example as a layer of Sb2Te3. In accordance with the invention, however, a tellurium-rich surface layer of the cadmium telluride layer is produced, on which a first material is deposited which is capable of forming an electrically conductive second material with tellurium and of producing the second material by reaction of the first material and tellurium in the surface layer. The second material forms the first layer of the back contact layer.
申请公布号 US2016260853(A1) 申请公布日期 2016.09.08
申请号 US201415024859 申请日期 2014.07.16
申请人 CHINA TRIUMPH INTERNATIONAL ENGINEERING CO., LTD. ;CTF SOLAR GMBH 发明人 Siepchen Bastian;Späth Bettina;Peng Shou
分类号 H01L31/0224;H01L31/18;C23C14/34;C23C14/58;C23C14/02;C23C14/14 主分类号 H01L31/0224
代理机构 代理人
主权项 1. A method for the manufacture of a back contact layer for CdTe thin-layer solar cells in superstrate configuration, characterized in that a first back contact layer is produced by means of the following steps: producing a tellurium-rich surface layer of the cadmium telluride layer, depositing a first material which is capable of forming an electrically conductive second material with tellurium on the tellurium-rich surface layer, and producing the second material by reacting the first material and tellurium in the surface layer.
地址 Shanghai CN