发明名称 Semiconductor Device, and Alternator and Power Conversion Device Which Use Same
摘要 The semiconductor device has a first external electrode having an outer peripheral section, which has a circular shape in top plan view and which is to be attached to an alternator. On the first external electrode there mounted: a MOSFET chip; a control circuitry to which voltages at or a current flowing between a first main terminal and a second main terminal of the MOSFET chip is inputted and which generates, on the basis of the voltages or the current, a control signal applied to a gate of the MOSFET chip; and a capacitor for providing a power supply to the control circuitry. The semiconductor device further has a second external electrode disposed opposite to the first external electrode with respect to the MOSFET chip. An electrical connection is made between the first main terminal of the MOSFET chip and the first external electrode, and between the second main terminal of the MOSFET chip and the second external electrode.
申请公布号 US2016315184(A1) 申请公布日期 2016.10.27
申请号 US201415102771 申请日期 2014.12.12
申请人 HITACHI POWER SEMICONDUCTOR DEVICE, LTD. 发明人 ISHIMARU Tetsuya;MORI Mutsuhiro;SAKANO Junichi;ONDA Kohhei
分类号 H01L29/78;H01L23/31;H02M7/00;H02K19/36;H02P9/00;H02M7/217;H01L23/373;H02K11/04 主分类号 H01L29/78
代理机构 代理人
主权项 1. A semiconductor device comprising: a first external electrode to be attached to an alternator, the first external electrode having an outer peripheral section, which has a circular shape in top plan view; a MOSFET chip; a second external electrode disposed on one side of the MOSFET chip, on the other side of which the first external electrode is disposed; a control circuitry to which a voltage at a drain electrode of the MOSFET chip and a voltage at a source electrode of the MOSFET chip are inputted or a current flowing between the drain electrode of the MOSFET chip and the source electrode of the MOSFET chip is inputted, the control circuitry generating a control signal provided to a gate of the MOSFET chip on the basis of the voltages or the current, wherein the first external electrode, the drain electrode of the MOSFET chip, the source electrode of the MOSFET chip, and the second external electrode are stacked one over another, wherein one of the drain electrode of the MOSFET chip and the source electrode of the MOSFET chip is electrically connected to the first external electrode, and wherein the other one of the drain electrode of the MOSFET chip and the source electrode of the MOSFET chip is electrically connected to the second external electrode.
地址 Hitachi-shi JP
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