DEVELOPMENT SOLUTION, PATTERN FORMATION METHOD, AND ELECTRONIC DEVICE PRODUCTION METHOD

摘要

Provided are: a development solution which is used on a resist film obtained from an active ray-sensitive or radiation sensitive composition, in order to achieve extremely high-level pattern collapse performance and bridge performance in a high-precision fine pattern, said development solution including a ketone-based or ether-based solvent having branched alkyl groups; a pattern formation method in which said development solution is used; and an electronic device production method including said pattern formation method.