发明名称 |
PERPENDICULAR MAGNETIC MEMORY WITH SYMMETRIC FIXED LAYERS |
摘要 |
An embodiment includes an apparatus comprising: a substrate; a perpendicular magnetic tunnel junction (pMTJ), on the substrate, comprising a first fixed layer, a second fixed layer, and a free layer between the first and second fixed layers; a first dielectric layer between the first fixed layer and the free layer; and a second layer between the second fixed layer and the free layer. Other embodiments are described herein. |
申请公布号 |
WO2016209272(A1) |
申请公布日期 |
2016.12.29 |
申请号 |
WO2015US38035 |
申请日期 |
2015.06.26 |
申请人 |
INTEL CORPORATION |
发明人 |
KUO, Charles C.;BROCKMAN, Justin S.;ALZATE VINASCO, Juan G.;OGUZ, Kaan;O'BRIEN, Kevin P.;DOYLE, Brian S.;DOCZY, Mark L.;SURI, Satyarth;CHAU, Robert S. |
分类号 |
H01L43/02;H01L43/08;H01L43/10 |
主分类号 |
H01L43/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|