| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that can be made compact by reducing the occupation area of a capacitor on a substrate and reducing the area of the substrate. SOLUTION: In the semiconductor device 10, an Al alloy film 19 is stacked on a CrSi film 14 forming a thin-film resistanceαwith a TEOS film 17 in between, and the films 14 and 19 form a capacitorβ. Namely, the thin-film resistanceαand the capacitorβform a lamination structure on a silicon substrate 11. The Al alloy film 19 and a wiring layer 20 forming one electrode of the capacitorβcan be formed at the same time by the same step as the formation step of wiring layers 18a and 18b constituting the lead wire of the thin-film resistanceα. COPYRIGHT: (C)2005,JPO&NCIPI
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