| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface emitting semiconductor laser that has appropriate emission characteristics and is capable of high-speed drive, and to provide a method for manufacturing the surface emitting semiconductor laser. SOLUTION: The surface emitting semiconductor laser 100 comprises a first mirror 102 formed at the upper portion of a substrate 101, an active layer 103, and a second mirror 104. The surface emitting semiconductor laser comprises a columnar section 130 including one portion of at least the second mirror 104, a first electrode 107 formed at the upper portion of the first mirror 102 and at the lower portion of the substrate 101, a second electrode 109 formed at the lower portion of the second mirror 104, an insulating layer 20 formed in contact with the columnar section 130 at one portion of the periphery of at least the columnar section 130, and a radiation section 40 formed at one portion of the periphery of at least the columnar section 130 via the insulating layer 20. The radiation section 40 is being electrically floated. COPYRIGHT: (C)2005,JPO&NCIPI
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