| 摘要 |
PROBLEM TO BE SOLVED: To inhibit the excessive diffusion of impurities on a diffusion-bit line in a semiconductor storage element and the excessive increase of the film thickness of a bit-line oxide film, and to easily obtain a desired bit-line oxide-film thickness and a bit-line impurity distribution when the semiconductor storage element with an ONO film and semiconductor elements excepting the storage element are formed on one substrate. SOLUTION: In a manufacturing method for a semiconductor device, a semiconductor storage element 30 with the ONO film 10 and a CMOS 50 are formed on the same semiconductor substrate 1. In the manufacturing method for the semiconductor device, heat treatments of three times in a total of the impurity activation of the CMOS 50 and the formation of a gate oxide film in two kinds of thicknesseses are conducted, and bit-line diffusion layers 11 for the semiconductor storage element section 30 and bit-line oxide films 12 are formed. COPYRIGHT: (C)2005,JPO&NCIPI
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