| 摘要 |
A method of manufacturing the semiconductor device is provided to minimize the hillock of the copper wiring by dividing the NH3 plasma process into the plural steps. The NH3 processing of the multi step is performed on the interlayer insulating film. The interlayer insulating film has multiple protective insulator film structure having the first barrier metal(140) and the first copper wiring layer(150). The first barrier barrier metal and the first copper wiring layer is planarized through the chemical mechanical polishing. The gapping film(160) for copper diffusion prevention is formed on the interlayer insulating film of the multiple protective insulator film structure. The capping layer for copper diffusion prevention is planarized through the chemical mechanical polishing.
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