| 摘要 |
A method for chemical mechanical planarization of chalcogenide materials is provided to offer low degree of defect, dishing, local corrosion about a substrate containing chalcogenide in a CMP process by polishing the substrate with an abrasive composition. A method for chemical mechanical planarization of chalcogenide materials comprises the following steps of: locating a substrate having a surface including one or more features including chalcogenide materials with a grinding pad; delivering an abrasive composition including an abrasive and an oxidizer; and polishing the substrate with the abrasive composition. The chalcogenide material includes one or more selected from a group consisting of germanium, antimony, tellium, silicon, arsenic, phosphorus, indium, scandium, yttrium, lanthanum, boron, aluminium, gallium, thallium, nitrogen, bismuth, vanadium, tantalum and niobium.
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