| 摘要 |
An etching system in which fall of the rate of operation can be suppressed while suppressing consumption of a reactive gas. First and second buffers (23, 25) of the etching system are connected in series between a cylinder (21) and an etching chamber (11) through piping (22, 24, 26) having valves (22a, 24a, 26a), respectively. A controller (40) controls the valves (22a, 24a, 26a) individually. The piping (22, 24, 26) and the first and second buffers (23, 25) form a gas supply passage leading from the cylinder (21) to the etching chamber (11). The pressure of the cylinder (21) is set higher than that of the etching chamber (11). Different pressures are set for the first and second buffers (23, 25) and the etching chamber (11) such that these pressures descend from the upstream toward the downstream of the gas supply passage. |
