发明名称 Semiconductor device and semiconductor package including the same
摘要 A semiconductor device includes a first substrate including at least one first well region and first impurity regions on portions of the substrate and a bias voltage plate on a surface of the substrate. A semiconductor device may be of a three dimensional stack structure, and in example embodiments, the semiconductor device may further include a through contact plug substantially perpendicularly penetrating at least one substrate and at least one bias voltage plate. Therefore, a design margin of a semiconductor device may be enhanced and a bias voltage may be provided reliably.
申请公布号 US2010018760(A1) 申请公布日期 2010.01.28
申请号 US20090458874 申请日期 2009.07.27
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SONG KI-WHAN;LEE JUNG-BAE
分类号 H03K3/01;H05K1/16 主分类号 H03K3/01
代理机构 代理人
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