发明名称 |
Semiconductor device and semiconductor package including the same |
摘要 |
A semiconductor device includes a first substrate including at least one first well region and first impurity regions on portions of the substrate and a bias voltage plate on a surface of the substrate. A semiconductor device may be of a three dimensional stack structure, and in example embodiments, the semiconductor device may further include a through contact plug substantially perpendicularly penetrating at least one substrate and at least one bias voltage plate. Therefore, a design margin of a semiconductor device may be enhanced and a bias voltage may be provided reliably. |
申请公布号 |
US2010018760(A1) |
申请公布日期 |
2010.01.28 |
申请号 |
US20090458874 |
申请日期 |
2009.07.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SONG KI-WHAN;LEE JUNG-BAE |
分类号 |
H03K3/01;H05K1/16 |
主分类号 |
H03K3/01 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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