PHOTO-PATTERNABLE GATE DIELECTRICS FOR OFET

摘要

Articles utilizing polymeric dielectric materials for gate dielectrics and insulator materials are provided along with methods for making the articles. The articles are useful in electronics-based devices that utilize organic thin film transistors.

主权项

1. An article comprising:
a. a substrate having a first surface and a second surface; b. an organic semiconductor layer; c. a gate, a source, and a drain electrode; and d. a dielectric layer; wherein the dielectric layer comprises a polymer:wherein A is an epoxide-containing monomer; B is second monomer; n is an integer of one or greater; m is an integer of one or greater; the ratio of n:m is from about 20:1 to about 1:20; and each R1 and R2 are independently, hydrogen, substituted or unsubstituted alkyl, substituted or unsubstituted aryl or heteroaryl, substituted or unsubstituted cycloalkyl, substituted or unsubstituted aralkyl, ester, alkoxy, thiol, thioalkyl, or halide; and Linker is a substituted or unsubstituted alkyl, substituted or unsubstituted aryl or heteroaryl, substituted or unsubstituted cycloalkyl, aralkyl, ester, ether, alkoxy, alkylthio, or thioalkyl.